发明名称 |
High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS) |
摘要 |
Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.
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申请公布号 |
US7161773(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20050075079 |
申请日期 |
2005.03.07 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
FONTANA, JR. ROBERT EDWARD;HO KUOK SAN;PAN TAO;TSANG CHING HWA |
分类号 |
G11B5/39;G01R33/09;G11B5/127 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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