发明名称 High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS)
摘要 Several embodiments of a sense current perpendicular to the planes of the sensor (CPP) and flux guide type of read head has a gap between first and second shield layers at an air bearing surface (ABS) where the flux guide is located which is less than a gap between the first and second shield layers at a recessed location where the sensor is located. This reduced gap increases the linear bit density capability of the read head. A longitudinal bias stack (LBS) is located in the sensor stack. Several unique methods of construction are described for forming the magnetic head assemblies.
申请公布号 US7161773(B2) 申请公布日期 2007.01.09
申请号 US20050075079 申请日期 2005.03.07
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 FONTANA, JR. ROBERT EDWARD;HO KUOK SAN;PAN TAO;TSANG CHING HWA
分类号 G11B5/39;G01R33/09;G11B5/127 主分类号 G11B5/39
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