| 摘要 |
A circuit for biasing a Field Effect Transistor (FET) is provided. The FET has a gate, a drain, and a source and the circuit comprises a current limiting resistor having a first end and a second end, the first end being connected to the gate; and a closed-loop control circuit connected to the second end, applying and controlling DC voltage to the second end, so that a gate bias voltage that is applied to the gate becomes equal to a reference voltage of a predetermined DC voltage.
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