发明名称 |
Forming gate oxides having multiple thicknesses |
摘要 |
Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.
|
申请公布号 |
US7160771(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20030724483 |
申请日期 |
2003.11.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHOU ANTHONY I-CHIH;CHUDZIK MICHAEL PATRICK;FURUKAWA TOSHIHARU;GLUSCHENKOV OLEG;KIRSCH PAUL DANIEL;LEE BYOUNG HUN;ONISHI KATSUNORI;PARK HEEMYOUNG;SCHEER KRISTEN COLLEEN;SEKIGUCHI AKIHISA |
分类号 |
H01L21/8242;H01L21/3205;H01L21/336;H01L21/8234;H01L21/8238 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|