Method of manufacture for a trench isolation structure having an implanted buffer layer

摘要

The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure ( 130 ), in one embodiment, includes a trench located within a substrate ( 110 ), the trench having an implanted buffer layer ( 133 ) located in the sidewalls thereof. The trench isolation structure ( 130 ) further includes a barrier layer ( 135 ) located over the implanted buffer layer ( 133 ), and fill material ( 138 ) located over the barrier layer ( 135 ) and substantially filling the trench.