发明名称 UNIT LAYER POSTTREATING CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FILM FORMATION THEREWITH
摘要 A unit layer posttreating catalytic chemical vapor deposition apparatus that not only can enhance, with respect to silicon nitride films and the like, in-plane uniformity, step coverage and film quality but also for each unit layer, can perform surface treatment after film layer formation to thereby produce a thin film; and a method of unit layer posttreating film formation. There is provided a method for laminating of thin films posttreated for each unit layer, comprising repeating a cycle of steps consisting of the film formation step of introducing a mixed gas containing silane gas and ammonia gas as a raw gas in the form of rectangular pulse in reaction vessel (2) and performing catalytic pyrolysis of the raw gas by means of catalytic material (8) to thereby superimpose a silicon nitride film on substrate (5); the one surface treatment step of bringing ammonia gas into contact with the catalytic material (8) and realizing exposure of the surface of silicon nitride film on the substrate (5) to the ammonia gas; and the other surface treatment step of bringing hydrogen gas into contact with the catalytic material (8) and realizing exposure of the surface of silicon nitride film on the substrate (5) to the hydrogen gas. ® KIPO & WIPO 2007
申请公布号 KR20070004780(A) 申请公布日期 2007.01.09
申请号 KR20067019946 申请日期 2006.09.26
申请人 ULVAC, INC. 发明人 KITAZOE MAKIKO;ITOH HIROMI;ASARI SHIN;SAITO KAZUYA
分类号 H01L21/318;C23C16/34;C23C16/42;C23C16/44;C23C16/56 主分类号 H01L21/318
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