发明名称 |
Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
摘要 |
In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate ( 24 ) is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location ( 12 ) where the source fluid is supplied and the substrate ( 24 ). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate ( 24 ) is exposed to both the source fluid and the auxiliary fluid.
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申请公布号 |
US7160809(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20030473222 |
申请日期 |
2003.09.29 |
申请人 |
TECHNISCHE UNIVERSITEIT |
发明人 |
HAMERS EDWARD ALOYS GERARD;SMETS ARNO HENDRIKUS MARIE;VAN DE SANDEN MAURITIUS CORNELIUS MARIA;SCHRAM DANIEL CORNELIS |
分类号 |
H01L21/311;C23C16/24;C23C16/513;H01L21/31 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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