发明名称 |
Semiconductor storage device and controlling method therefor |
摘要 |
A semiconductor storage device includes a circuit receiving a command signal for generating a read control signal (RPB) based on the transition of a clock signal CLK and a circuit receiving the command signal for generating a write control signal (WPB) based on the transition of the clock signal CLK. The read cycle in which decoding of an address, selection of a word line and activation of a sense amplifier are executed based on the read control signal to read cell data, and the write cycle in which decoding of an address, selection of a word line and activation of a write amplifier are executed based on the write control signal and bit line pre-charging is also carried out, are carried out alternately. The sense period of the read cycle is overlapped with the decoding period of the write cycle.
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申请公布号 |
US7162657(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20030639716 |
申请日期 |
2003.08.12 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TAKAHASHI HIROYUKI;MATSUI YUUJI;SONODA MASATOSHI;KATO YOSIYUKI |
分类号 |
G06F1/12;G11C11/413;G11C11/407;G11C11/417;G11C11/419 |
主分类号 |
G06F1/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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