| 摘要 |
A method for forming a gate oxide layer in a semiconductor device is provided to remove a step between a high voltage region and a low voltage region by dividing first and second gate oxide layers while using an etch process technique in a high voltage region of a peripheral circuit region of a semiconductor device. A low voltage region for forming a low voltage transistor and a high voltage region for forming a high voltage transistor are defined in a semiconductor substrate(100). A pad oxide layer and a pad nitride layer are formed on the substrate. The pad nitride layer and the pad oxide layer in the high voltage region are removed to form a trench. A first gate oxide layer(106) is formed in the trench. A second gate oxide layer(108) is formed on the resultant structure.
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