发明名称 METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE
摘要 A method for forming a metal line of a semiconductor device is provided to reinforce the adhesiveness between a metal diffusion barrier and an interlayer dielectric and to prevent the generation of voids by removing fluorine elements from a surface of the interlayer dielectric using a degas treatment. A first metal line(32) is formed on a semiconductor substrate(31). An etch stop layer and an interlayer dielectric(34) are sequentially formed on the resultant structure. A via hole(36) and a trench(38) adjacent to the via hole are formed on the resultant structure by removing selectively the interlayer dielectric. At this time, the etch stop layer is exposed to the outside through the via hole. The first metal line is exposed to the outside by removing selectively the exposed etch stop layer. An oxide layer(39) is formed on the entire surface of the resultant structure. A degas treatment is performed on the resultant structure.
申请公布号 KR20070004247(A) 申请公布日期 2007.01.09
申请号 KR20050059692 申请日期 2005.07.04
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 JOO, SUNG JOONG
分类号 H01L21/28 主分类号 H01L21/28
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