摘要 |
A method for forming a metal line of a semiconductor device is provided to reinforce the adhesiveness between a metal diffusion barrier and an interlayer dielectric and to prevent the generation of voids by removing fluorine elements from a surface of the interlayer dielectric using a degas treatment. A first metal line(32) is formed on a semiconductor substrate(31). An etch stop layer and an interlayer dielectric(34) are sequentially formed on the resultant structure. A via hole(36) and a trench(38) adjacent to the via hole are formed on the resultant structure by removing selectively the interlayer dielectric. At this time, the etch stop layer is exposed to the outside through the via hole. The first metal line is exposed to the outside by removing selectively the exposed etch stop layer. An oxide layer(39) is formed on the entire surface of the resultant structure. A degas treatment is performed on the resultant structure.
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