| 摘要 |
A semiconductor light detecting element (PD1) is provided with a multilayer structure (LS1) and a glass board (1) which is optically transparent to incident light. The multilayer structure includes a stacked etching stopping layer (2), an n-type high concentration carrier layer (3), an n-type light absorbing layer (5) and an n-type cap layer (7). In the vicinity of a first main surface (101) of the multilayer structure, a light receiving region (9) is formed, and on the first main surface, a first electrode (21) is provided. On a second main surface (102), a second electrode (27) and a third electrode (31) are provided. On the first main surface, a film (10) which covers the light receiving region and the first electrode is formed. On a front surface (10a) of the film, the glass board (1) is fixed. ® KIPO & WIPO 2007 |
