发明名称 |
Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch |
摘要 |
There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
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申请公布号 |
US7161178(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20030396498 |
申请日期 |
2003.03.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA HIDEOMI |
分类号 |
G02F1/136;H01L29/04;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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