AN APPARATUS FOR CHEMICAL VAPOR DEPOSITION

摘要

An equipment for chemical vapor deposition that increases or maximizes production yield by preventing reaction gas from causing a deposition material to be formed on an inner wall of a lower chamber adjacent to heating parts or a thermometer and preventing defects of chemical vapor deposition process caused by shielding of radiant heat of the heating parts or measuring defects of the thermometer is provided. An equipment for chemical vapor deposition comprises: a reaction chamber(120) for providing a sealed space independent from the outside; heating parts(130) formed outside the reaction chamber to heat the inside of the reaction chamber; a thermometer(140) for measuring temperature of the inside of the reaction chamber heated by the heating parts from the outside of the reaction chamber; a chuck(150) for supporting a wafer(110) within the reaction chamber; a reaction gas supply part(160) for supplying reaction gas onto the chuck from one side of the reaction chamber; a vacuum pump(170) for pumping the reaction gas through a pipe formed at the other side of the reaction chamber; and a cleaning gas supply part(180) for flowing a cleaning gas along an inner wall of the reaction chamber in a lower part of the wafer to prevent the reaction gas from being coated on the inner wall of the reaction chamber and clean a deposition material coated on the inner wall of the reaction chamber.