| 摘要 |
A method for forming a transistor in a semiconductor device is provided to enhance effective channel length and to reduce a leakage current of a source/drain region by forming a stepped recess gate region. A recess gate region is formed at an active region of a substrate(111) having an isolation region(113). A hard mask pattern is formed so as to have a hole opening part of small size at inner sides of the recess gate region. A stepped recess gate region(119) is then formed by etching the bottom of the recess gate region using the hard mask pattern as a mask. A gate pattern is formed to partially overlap the stepped recess gate region.
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