| 摘要 |
A method for manufacturing a semiconductor device is provided to remove horns generated at bottom edges of a groove by using an ozone water. A trench is formed by etching a field region of a substrate(11). A sidewall oxide layer(13) and a linear nitride layer are sequentially formed on the trench. An isolation layer(12a) is then formed by filling a gap-fill oxide layer in the trench. A groove(14) is formed by etching an active region of the substrate. The sidewall oxide layer exposed by the groove is removed. Horns generated at the bottom edges of the groove are oxidized by treating ozone water. The oxidized horn is then removed.
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