METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent misalignment between a gate and a recess due to the shrink of a gate line by using damascene processing. An insulating pattern(24a) is formed on a substrate(21) to have an opening part for opening the substrate of a recess region. A recess is formed by etching the substrate using the insulating pattern as a mask. A gate is then formed to fill the recess and to fill partially the opening part. The insulating pattern is removed. The insulating pattern is composed of an SOG(Spin On Glass) layer or an HARP(High Aspect Ratio Recess) oxide layer.