| 摘要 |
<p>A phase shift mask is provided to restrain the misalign between upper and lower layers by inserting a plurality of predetermined patterns with the same shape and size as those of a cell pattern into an overlay mark. A chromeless phase shift mask includes an overlay mark. The overlay mark includes an inner bar. A plurality of predetermined patterns are arranged on an inner bar of the overlay mark. The plurality of predetermined patterns have the same shape and size as those of a main cell pattern. The main cell pattern is composed of a light transmitting region(100), a phase shift region(110) and a light shielding region(120).</p> |
