| 摘要 |
A method for manufacturing a semiconductor device is provided to restrain a metal silicide layer from being protruded to the outside under a re-oxidation process by using a hard mask nitride layer capable of applying a compressive stress onto the metal silicide layer. A channel forming portion is recessed on a semiconductor substrate(21). A gate insulating layer(24), a polysilicon layer(25), a metal silicide layer(26) and a hard mask nitride layer(27) are sequentially formed thereon. Then, the hard mask nitride layer, the metal silicide layer, the polysilicon layer and the gate insulating layer are selectively removed. The hard mask nitride layer is capable of applying a compressive stress onto the metal silicide layer.
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