METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent the degradation of refresh characteristics due to the penetration of predetermined ions by implanting selectively threshold voltage controlling ions into a gate region alone using a gate forming pattern as an ion implantation barrier. An oxide layer(22) and a polysilicon layer(23) are sequentially formed on a semiconductor substrate(21). A substrate recess forming region is exposed to the outside by etching the polysilicon layer. A threshold voltage controlling ion implantation is selectively performed on the exposed substrate recess forming region alone. The oxide layer is selectively removed from the substrate recess forming region.