| 摘要 |
A method for forming a spacer in a semiconductor device is provided to obtain a buffer oxide layer of uniform thickness by using two-step etching having different etch selectivity. A buffer oxide layer(20) and a spacer insulating layer are sequentially formed on a semiconductor substrate(10) having a gate electrode pattern(G.P). A first etching and a second etching processes are sequentially performed to the resultant structure to form a spacer(S) and a uniform buffer oxide layer, wherein the second etching is a relatively high etch selectivity against the buffer oxide layer. That is, the etch selectivity of the insulating layer against the buffer oxide layer is 15 : 1.
|
