| 摘要 |
A metal depositing apparatus is provided to reduce time and cost required in a process by integrating deposition and pattern forming processes. When an inert-gas ion is incident, a target(2) discharges a metal particle(6) to be deposited on a glass substrate(8). The metal particle discharged from the target is attached on the glass substrate such that a conductive layer is formed thereon. An element induce apparatus(20) is installed on a lower surface of the glass substrate. A certain patterned conductor is formed on a surface of the molecular inducing apparatus. A power supplying unit applies predetermined power to the conductor of the molecular inducing apparatus. The pattern formed on the molecular inducing apparatus is the same pattern as a conductive pattern formed on the glass substrate.
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