| 摘要 |
<p>An exposure mask is provided to improve characteristics of a double exposure without the degradation of device characteristics and to improve the degree of integration by using a light shielding pattern of a front surface and a line/space pattern of a rear surface. First and second light shielding patterns(13) are formed at upper and lower sides of a front surface of a quartz substrate(11). First and second line/space patterns(15) are formed at upper and lower sides of a rear surface of the quartz substrate. The first and second line/space patterns are vertical to each other. The upper and lower sides of the quartz substrate have the same size.</p> |
