| 摘要 |
<p>A method for forming a recess gate of a semiconductor device is provided to prevent a leakage current and to improve refresh property by using a recess gate mask of asymmetrical structure. A well and a threshold voltage control region are formed in a substrate(100) having an isolation layer. A recess gate region is formed by etching the substrate, wherein the recess gate region is misaligned to a direction of a storage electrode region. A polysilicon layer(150), a gate metal film(160), and a hard mask(170) are sequentially stacked on the recess gate region. A recess gate pattern is formed by etching the stacked structure, wherein the misaligned recess gate region is exposed. A first spacer(180) is formed at sidewalls of the exposed recess gate region and the recess gate pattern. A source/drain junction(185) is formed in the substrate. After a second spacer(190) is formed at sidewalls of the recess gate pattern, a contact plug(200) is then filled in the exposed substrate.</p> |
