<p>A semiconductor nano device is provided to improve sensitivity of a gas sensor and to reduce sensor size by coating metal nano particles on a surface of a carbon nanotube transistor. An alignment marker is formed on a SiO2/Si substrate(10). A pattern of liquid catalyst is manufactured using a PMMA(polymethylmethacrylate) layer on the SiO2/Si substrate that is insulated by a SiO2 layer. The PMMA layer is removed by an acetone solution. A single walled carbon nanotube(14) is grown at CH4 and H2 atmosphere during 10 minutes in a furnace of 900 ‹C. An electrode(12) is formed by performing photolithography and thermal evaporation on the carbon nanotube, thereby configuring a carbon nanotube transistor. A metal nano particle(16) is coated on a surface of the carbon nanotube transistor.</p>
申请公布号
KR20070002111(A)
申请公布日期
2007.01.05
申请号
KR20050057421
申请日期
2005.06.30
申请人
KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, DANKOOKUNIVERSITY
发明人
LEE, JEONG O;SO, HYE MI;KONG, KI JEONG;KIM, BYUNG KYE;CHANG, HYUN JU;RYU, BEYONG HWAN;PARK, NOE JUNG;CHOI, YOUNG MIN