| 摘要 |
A semiconductor device having a recess gate and a method for fabricating the same are provided to prevent a recess pattern from being attacked by previously forming an attack prevention spacer at a gate of the recess pattern. A semiconductor device comprises a semiconductor substrate(21), a recess pattern formed in a recess gate predefining region of the substrate, an attack prevention spacer(27b) formed on a gate sidewall of the recess pattern, a gate oxide film(29) formed on a surface of the recess pattern, and a recess gate(200) formed on the gate oxide film. A lower portion of the recess gate is burred in the recess pattern, and the remaining portion protrudes from a surface of the substrate.
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