| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the generation of horn and to obtain improved device characteristics by forming a recess groove using an SPE(Solid Phase Epitaxy). A pad oxide layer and a pad nitride layer are sequentially formed on a semiconductor substrate(11) with an isolation region and an active region. A trench is formed within the isolation region by performing etching on the resultant structure. An isolation layer(14) is formed in the trench. The active region except for a recess gate forming portion is exposed to the outside by etching selectively the pad nitride layer and the pad oxide layer. An epitaxial silicon layer(15) with a lower height than that of the isolation layer is formed on the exposed active region by using an SPE. A groove is formed in the epitaxial silicon layer by removing the remaining pad nitride and oxide layers.
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