MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase the distance between bit lines and to easily form a storage node contact by performing two-step etch processes using argon gas. An interlayer dielectric(107) is formed on a substrate(101) having a gate electrode(100). A tungsten film(110) is formed through the interlayer dielectric. A hard mask nitride pattern is formed to expose partially the tungsten film. The top edge portions of the exposed tungsten film are firstly etched by using a photoresist pattern as a mask. The tungsten film is secondly etched by using the photoresist pattern as a mask, thereby forming a bit line with a relatively wide width compared to the hard mask pattern.