| 摘要 |
A method for forming a semiconductor device is provided to increase the channel length of a gate by using a buried gate structure and growing an epitaxial layer on a source/drain junction. A trench is formed at a gate region of a substrate(11) having an isolation layer(13). A gate oxide layer(21) is formed on the trench. A gate is then filled in the trench. An epitaxial layer(31) is grown on an active region between the gates. By implanting dopants into the resultant structure, a source/drain junction(33) is formed in the substrate of the lower of the epitaxial layer.
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