| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the leaning of a gate generated in mat edge portions without forming a recess gate at a dummy region. A gate line(110) has a cell region and a dummy region. A first photoresist pattern is formed on the cell region to define a recess gate region. A recess gate region is formed by etching the active region using the first photoresist pattern. A polysilicon layer for filling the recess gate region, a gate metal film and a hard mask are sequentially stacked on the resultant structure. A second photoresist pattern is formed on the cell and the dummy regions to define a gate region. A gate electrode is formed by etching the stacked structure using the second photoresist pattern.
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