| 摘要 |
A method for manufacturing a semiconductor device having a recess channel is provided to simplify the manufacturing process and to increase the channel length without using a recess gate hard mask, thereby forming an RCAT(Rcess Channel Array Transistor). A hard mask is formed on a substrate(31). An isolation trench(34) is formed by etching the substrate using the hard mask. The trench is filled with an isolation layer(38). A hard mask pattern(33) is formed by etching the hard mask. A recess channel(41) is formed by etching a recess channel region of the substrate using the hard mask pattern as an etch barrier. After the hard mask pattern is removed, a gate oxide layer is formed. A gate structure is formed on the gate oxide layer to fill the recess channel.
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