| 摘要 |
<p>An exposure system and a method are provided to embody an exact CD(Critical Dimension) in each wafer by changing a dose of exposure according to a surface state of the wafer using a scan unit and a control unit. An exposure system includes a wafer storing unit for loading a wafer with a lower layer and a photoresist layer, a scan unit for obtaining surface data from the wafer by scanning the wafer surface, an exposure lamp(110) on the wafer, a reticle(108) between the exposure lamp and the wafer, an exposure lens between the reticle and the wafer, and a control unit(116) for controlling an exposure state according to the wafer surface data. The wafer surface data include the thickness and reflectivity of the lower layer.</p> |
