| 摘要 |
<p>A method for forming a recess gate in a semiconductor device is provided to reduce GIDL(Gate Induced Drain Leakage) current by performing two-step of tilt ion-implantation while rotating a substrate. A gate forming region of a substrate(21) is recessed. Dopants are implanted into the resultant structure to control the channel threshold voltage. At this time, two-step of tilt ion-implantation processes are performed while rotating the substrate to 180 degree, so that the doping concentration of channel edges is lower than that of the channel center portion. A gate insulating layer(25) and a gate conductive layer(26) are sequentially formed on the resultant structure and patterned, thereby forming a recess gate(28).</p> |
