| 摘要 |
A method for fabricating a semiconductor device is provided to perform stably an additional ion implantation on a predetermined portion adjacent to a plug without excessive dopant diffusion. An insulating pattern with a contact hole is formed on a substrate(30) with a conductive region. A selective epitaxial silicon layer is formed under the contact hole in order to contact the conductive region. An ion implantation is performed on the selective epitaxial silicon layer. A heat treatment is performed on the resultant structure in order to activate implanted ions. A metallic plug(36) is formed on the selective epitaxial silicon layer.
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