| 摘要 |
An EM(ElectroMigration) test pattern of a semiconductor device is provided to discriminate a line EM from a via EM without the analysis of a cross-section. An EM test pattern of a semiconductor device includes a main lower metal line with first to fourth nodes, first and second test pads at both end portions of the main lower metal line, first and second lower metal lines connected to the first and fourth nodes, third and fourth test pads connected with the first and second lower metal lines, a main upper metal line with fifth to eighth nodes on the main lower metal line, fifth and sixth test pads at both end portions of the main upper metal line, first and second upper metal lines connected to the fifth and eighth nodes, and third to fifth upper and lower metal lines connected with each other through ninth to twelfth test pads.
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