Nanostructure e.g. silicon nanostructure, for use in nanoelectronics field, has silver deposits that cover structure e.g. atomic lines of silicon, and cover silicon atoms of silicon carbide surface and silicon lines formed on surface

摘要

The nanostructure has a set of structures on a surface of a silicon carbide substrate (2). The structure is selected among quantum connection pads, atomic segments, atomic lines and aggregates. Silver deposits cover the structure e.g. atomic lines of silicon (8). The silver deposits are made such that it covers silicon atoms of a silicon carbide surface and silicon lines formed on the carbide surface, where the surface has a c-4 by 2 type reconstruction. The carbide surface is constituted of extremely dense atomic lines of silicon resting on a surface composed of silicon atoms. An independent claim is also included for a method of manufacturing a nanostructure.