| 摘要 |
<p>A method for forming a semiconductor device is provided to perform easily an aligning process for a second photolithographic process by analyzing information on a lower structure using an optical CD(Critical Dimension) metrology. An etch object layer(120) and a hard mask layer are sequentially formed on a semiconductor substrate(100). A first hard mask pattern(135a) is formed on the resultant structure by performing a first photolithographic process on the hard mask layer. A photoresist layer is formed on the entire surface of the resultant structure. The first hard mask pattern under the photoresist layer is analyzed by using an optical CD metrology. Then, a second photolithographic process is performed on the resultant structure on the basis of the result of the analyzing process.</p> |
