| 摘要 |
<p>A NAND type flash memory device and a method for manufacturing the same are provided to reduce parasitic capacitance and to increase the coupling ratio by forming a floating gate of a parallelogram shape with a desired angle. An isolation layer having a desired angle is formed in a semiconductor substrate(21) to define an active region(22) and a field region(23). A tunnel oxide layer and a floating gate(24) are formed on the active region, wherein the floating gate is formed to have a parallelogram shape with same angle to the desired angle of the isolation layer. A dielectric film and a control gate(25) are formed on the resultant structure. The active and the field region have an angle of 45 degree.</p> |
