| 摘要 |
A semiconductor memory device is provided to reduce unnecessary active and a precharge current and an auto refresh current by operating a column address redundancy part only when a read or write command is applied. A latch part(200) outputs a latch signal by latching an address buffered synchronously with a clock. A row and column address part(300) outputs a row address by selecting the latch signal when an active signal is enabled, and outputs the row address by selecting a refresh address when a refresh signal is enabled, and generates a column address by controlling the latch signal according to a read/write command. A decoder part(400) outputs a mat selection signal to select a mat according to the row address, and selects one word line of the selected mat. A logic calculation part outputs the mat selection signal when the read/write command is enabled, and blocks the output of the mat selection signal when the read/write command is disabled. A column address redundancy part(600) controls a column address redundancy operation according to the mat selection signal.
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