发明名称 REGULATOR OF BIT LINE PRECHARGE VOLTAGE AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME
摘要 A regulator of a bit line precharge voltage and a semiconductor memory device comprising the same are provided to assure precharge time margin by decreasing a bit line precharge voltage level for a certain time by a precharge command. A voltage divider part(100) receives a pulse signal, and divides a core voltage by regulating a resistance value according to the enabling of the pulse signal. A control part(300) generates a pull-up signal and a pull-down signal for controlling a bit line precharge voltage level by receiving the output of the voltage divider part. A driving part(400) drives the bit line precharge voltage as a power supply voltage according to the pull-up signal and the pull-down signal.
申请公布号 KR20070002693(A) 申请公布日期 2007.01.05
申请号 KR20050058328 申请日期 2005.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SANG HO
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
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