SEMICONDUCTOR DEVICE WITH DUAL METAL GATE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent damage of a gate insulating layer by using a dual metal gate having a ruthenium-tantalum alloy as a gate electrode. A gate insulating layer(33) is formed on a substrate(31) defined with an NMOS and a PMOS regions. A gate electrode(34) of an NMOS device is formed on the gate insulating layer of the NMOS region, wherein the gate electrode is composed of a ruthenium-tantalum alloy. A gate electrode of a PMOS device is formed on the gate insulating layer of the PMOS region, wherein the gate electrode is stacked sequentially on a ruthenium-tantalum alloy electrode(34a) and a tantalum electrode(36).