| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve data retention property by removing mobile ions using a cleaning process containing carboxylic acid(R-COOH). A gate stack(46) is formed on an active region of a substrate(40) defined by an isolation layer. A spacer(47) is formed at both sidewalls of the gate stack. A stopping nitride layer(48) is formed on the resultant structure. An interlayer dielectric(49) is formed on the stopping nitride layer. A contact is formed to connect the substrate through the interlayer dielectric. After the interlayer dielectric or a contact hole is formed, a cleaning process is performed by using a cleaning solution containing carboxylic acids.</p> |
