MANUFACTURING METHOD OF VERTICAL LIGHT EMITTING DEVICE

摘要

A method for manufacturing a vertical semiconductor light emitting device is provided to improve the stability of the light emitting device and to enhance the yield by forming a metal support layer without a dicing process. A lower clad layer, an active layer, and an upper clad layer are sequentially formed on a substrate. A plurality of first electrode layers(36) are formed on the upper clad layer. A metal support layer(37) is formed on each first electrode layer. A trench is formed at a portion between adjacent first electrode layers. The substrate is removed from the resultant structure. A second electrode layer(38) is formed under the lower clad layer. A sapphire substrate is used as the substrate.