| 摘要 |
A method for manufacturing a CMOS image sensor is provided to enhance the uniformity of thickness of an isolation layer, to remove a stepped portion between an active region and the isolation layer within a pixel region, and to improve photo efficiency. First and second regions are defined on a substrate(40). A plurality of trenches are formed within the first and the second regions, respectively. An isolation layer(43) is formed in each trench by using a silicon oxide layer. A planarizing process is performed on the resultant structure. An organic photoresist layer is coated on the entire surface of the resultant structure. The isolations of the first region are exposed to the outside by removing partially the organic photoresist layer. Then, the exposed isolation layers are removed.
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