| 摘要 |
A method for forming a gate of a semiconductor device is provided to restrain the generation of dielectric at an interface between a tungsten nitride layer and a polysilicon layer and to lessen the stress of a hard mask nitride layer by sealing a gate electrode using the hard mask nitride layer. An isolation layer(22) for defining an active region is formed on a semiconductor substrate(21). A groove is formed on the resultant structure by recessing a gate forming portion of the active region. A gate insulating layer(23), a polysilicon layer(24), a diffusion barrier(25) made of tungsten nitride and a tungsten film(26) are sequentially formed on the resultant structure. The tungsten film, the diffusion barrier, and the polysilicon layer are selectively etched to be formed like a gate type structure. A hard mask for sealing the gate type structure is formed on the resultant structure by etching the hard mask nitride layer.
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