| 发明名称 |
METHOD OF PRODUCTION FOR THIN FILM TRANSISTOR CIRCUIT DEVICE |
| 摘要 |
<p>A method for manufacturing a thin film transistor circuit device is provided to remarkably improve corrosion resistance of a molybdenum alloy to air by adding niobium to molybdenum in a ratio of from 5 to 20 atom%. An insulation film is formed on electrodes of a thin film transistor or a wiring. Openings are formed on the insulation film to expose at least a portion of the electrodes of the transistor or the wiring. A conductive film having a connection wiring connecting the electrodes or the openings is formed on the opening. The electrode of the thin film transistor or the wiring is made of a molybdenum alloy comprising niobium. After the opening is formed, the exposed surface of the metal is subjected to an oxidizing process.</p> |
| 申请公布号 |
KR20070003719(A) |
申请公布日期 |
2007.01.05 |
| 申请号 |
KR20060110237 |
申请日期 |
2006.11.09 |
| 申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
TANAKA HIROAKI;YASUDA KYOUNEI;SUZUKI SEIJI |
| 分类号 |
G02F1/1368;H01L29/786;G02F1/136;G02F1/1362;G09F9/30;H01L21/28;H01L21/3205;H01L21/336;H01L21/77;H01L21/84;H01L23/52;H01L27/12;H01L29/45;H01L29/49 |
主分类号 |
G02F1/1368 |
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