IMMERSION LITHOGRAPHY DEFECT REDUCTION

摘要

An immersion lithography defect reducing method and a system therefor are provided to remove completely residues of water drops without the increase of an immersion head air purge pressure. A resist layer is formed on a semiconductor substrate(10). A first exposing process is performed on the resist layer by using an immersion lithography exposure system. A predetermined treatment is performed on the resist layer between a second exposing process for removing the residues of a predetermined fluid and a post-exposure bake. Then, the post-exposure bake is performed on the resist layer. A developing process is performed on the resist layer. The predetermined treatment is performed by using the predetermined fluid.