| 摘要 |
<p>A method for fabricating a semiconductor device is provided to improve reliability in a semiconductor device fabrication by performing easily stably a patterning process. An etch object layer is formed on a substrate(30). An amorphous carbon pattern(32) is formed on the etch object layer. A tungsten film is formed on the entire surface of the resultant structure. A tungsten pattern(34) is formed on the resultant structure on which the amorphous carbon layer is not formed by using etching. A patterning process is performed on the etch object layer by using the tungsten pattern as an etch mask.</p> |
