POLY-METAL GATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A poly metal gate electrode and a manufacturing method thereof are provided to acquire CMOSFET and memory device capable of operating in a predetermined frequency band of several GHz or more by using a W/W-Si-N/WSix/polysilicon structure. A gate electrode of a semiconductor device includes a silicon electrode(33), a silicide based diffusion barrier on the silicon electrode, a ternary diffusion barrier, and a metallic electrode. The ternary diffusion barrier(36) is formed on the silicide based diffusion barrier. The metallic electrode is formed on the ternary diffusion barrier. The ternary diffusion barrier is composed of a W-Si-N structure.