| 摘要 |
A method for forming a trench type isolation layer of a semiconductor device is provided to simplify forming processes and to restrain the generation of moat at a corner portion of an isolation region. A pad silicon rich oxide layer is formed on a silicon substrate(10). A trench mask pattern is formed on the resultant structure by etching selectively the pad silicon rich oxide layer. At this time, the substrate is partially exposed to the outside. A trench is formed by etching the exposed portion of the substrate. A trench filling oxide layer(16) is formed on the resultant structure. A trench filling oxide layer is planarized by performing a CMP process using the trench mask pattern as a polish stop layer. The trench mask pattern is removed from the resultant structure by wet etching.
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