SEMICONDUCTOR DEVICE HAVING CMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device with an CMOS transistor and a manufacturing method thereof are provided to obtain optimum Vt values from NMOS and PMOS transistors using an improved gate electrode including a predetermined metal alloy layer. A semiconductor device includes a CMOS transistor which is composed of a first MOS transistor with a first channel of a first conductive type and a second MOS transistor with a second channel of a second conductive type. The first MOS transistor(110) is composed of a first gate insulating layer(112) and a gate electrode. The gate electrode includes a first metal alloy layer(118) composed of a first metal(114) and a second metal(116).