| 摘要 |
A method for forming a contact hole of a semiconductor device is provided to measure exactly the CD(Critical Dimension) and to secure an etch margin enough by forming a fine vertical photoresist pattern using an amine treatment. A photoresist layer is formed on a semiconductor substrate with an etch object pattern(31). An amine treatment is performed on the entire surface of the resultant structure. An exposing process is performed on the photoresist layer using a contact exposure mask. A photoresist pattern(35-2) of a T-top type structure is formed by using a developing process. A flowing process is performed on the photoresist pattern.
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